A Run-Time Reconfigurable Ge Field-Effect Transistor With Symmetric On-States
Here, we present a Ge based reconfigurable transistor, capable of dynamic run-time switching between n- and p-type operation with enhanced performance compared to state-of-the- art Si devices.Thereto, we have monolithically integrated an ultra-thin epitaxial and Socks defect-free Ge layer on a Si on insulator platform.To evade the commonly observed